t-max tm 050-8069 rev c 2-2011 650v 94a apt94n65b2c3 apt94n65b2c3g* *g denotes rohs compliant, pb free terminal finish. maximum ratings all ratings per die: t c = 25c unless otherwise speci ed . caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 500 a) drain-source on-state resistance 3 (v gs = 10v, i d = 47a) zero gate voltage drain current (v ds = 650v, v gs = 0v) zero gate voltage drain current (v ds = 650v, v gs = 0v, t c = 150c) gate-source leakage current (v gs = 20v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 5.8ma) static electrical characteristics symbol bv (dss) r ds(on) i dss i gss v gs(th) unit volts ohms a na volts ? ultra low r ds(on) ? low miller capacitance ? ultra low gate charge, q g ? avalanche energy rated ? extreme dv / dt rated ? dual die (parallel) ? popular t-max package super junction mosfet min typ max 650 0.03 0.035 1.0 50 100 200 2.1 3 3.9 c power semiconductors o o l mos "coolmos? comprise a new family of transistors developed by in neon technologies ag. "coolmos" is a trade- mark of in neon technologies ag." g d s unless stated otherwise, microsemi discrete mosfets contain a single mosfet die. this device is made with two parallel mosfet die. it is intended for switch-mode operation. it is not suitable for linear mode operation. microsemi website - http://www.microsemi.com symbol parameter apt94n65b2c3(g) unit v dss drain-source voltage 650 volts i d continuous drain current @ t c = 25c 1 94 amps continuous drain current @ t c = 100c 60 i dm pulsed drain current 2 282 v gs gate-source voltage continuous 20 volts p d total power dissipation @ t c = 25c 833 watts t j ,t stg operating and storage junction temperature range -55 to 150 c t l lead temperature: 0.063" from case for 10 sec. 260 dv / dt drain-source voltage slope (v ds = 480v, i d = 94a, t j = 125c) 50 v/ns i ar avalanche current 2 7 amps e ar repetitive avalanche energy 3 ( id = 3.5a, vdd = 50v ) 1 mj e as single pulse avalanche energy ( id = 3.5a, vdd = 50v ) 1800
050-8069 rev c 2-2011 dynamic characteristics apt94n65b2c3(g) source-drain diode ratings and characteristics thermal characteristics symbol r jc r ja min typ max 0.15 31 unit c/w characteristic junction to case junction to ambient microsemi reserves the right to change, without notice, the speci cations and information contained herein. symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 4 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 5 turn-off switching energy turn-on switching energy 5 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 300v i d = 94a @ 25c inductive switching v gs = 15v v dd = 400v i d = 94a @ 25c r g = 4.3 inductive switching @ 25c v dd = 400v, v gs = 15v i d = 94a, r g = 4.3 inductive switching @ 125c v dd = 400v, v gs = 15v i d = 94a, r g = 4.3 1 repetitive rating: pulse width limited by maximum junction temperature. 2 repetitive avalanche causes additional power losses that can be calcula- ted as p av = e ar *f . pulse width tp limited by tj max. 3 pulse test: pulse width < 380 s, duty cycle < 2% 4 see mil-std-750 method 3471 5 eon includes diode reverse recovery. 6 maximum 125c diode commutation speed = di/dt 600a/ s min typ max 13940 5200 229 580 72 234 32 59 498 167 2684 4448 3391 5082 unit pf nc ns j 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 10 -5 10 -4 10 -3 10 -2 0.1 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: symbol characteristic / test conditions min typ max unit i s continuous source current (body diode) 94 amps i sm pulsed source current 2 (body diode) 282 v sd diode forward voltage 4 (v gs = 0v, i s = -94a) 0.9 1.2 volts t rr reverse recovery time (i s = -94a, di / dt = 100a/ s) t j = 25c 960 ns 1271 q rr reverse recovery charge (i s = -94a, di / dt = 100a/ s) t j = 25c 31 c 43 i rrm peak recovery current (i s = -94a, di / dt = 100a/ s) t j = 25c 58 amps 56
050-8069 rev c 2-2011 typical performance curves apt94n65b2c3g 0.6 0.7 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 0. .95 1 .05 1. 1 .15 -50 0 50 100 150 0.8 0.9 1 1.1 1.2 1.3 1.4 0 40 80 120 160 200 0 10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 8 0 50 100 150 200 250 0 5 10 15 20 25 30 6.5v 4v 10 &15v v gs = 20v t j = 25c t j = -55c v ds , drain-to-source voltage (v) figure 2, low voltage output characteristics i c , drain current (a) t j = 125c v gs , gate-to-source voltage (v) figure 3, transfer characteristics i d , drain current (a) t c , case temperature (c) figure 5, maximum drain current vs case temperature i d , drain current (a) i d, drain current (a) figure 4, r ds (on) vs drain current i dr , reverse t j , junction temperature (c) figure 6, breakdown voltage vs temperature bv dss , drain-to-source breakdown voltage (normalized) t c , case temperature (c) figure 8, threshold voltage vs temperature v gs (th), threshold voltage (normalized) 0 0.5 1 1.5 2.0 2.5 3.0 -50 0 50 100 150 t j , junction temperature (c) figure 7, on-resistance vs temperature r ds(on) , drain-to-source on resistance (normalized) 4.5v 5.5v 6v 5v v gs = 10v v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle normalized to v gs = 10v @ 47a i d , drain current (a) v ds , drain-to-source voltage (v) figure 9, maximum safe operating area 1 10 100 800 1 10 100 800 1ms 100ms dc line 100s 10ms 10s
050-8069 rev c 2-2011 typical performance curves apt94n65b2c3g 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 0 10 20 30 40 50 0 50 00 50 00 50 00 0 40 80 120 160 1 10 100 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 100 200 300 400 500 600 700 0 40 80 120 160 0 2 4 6 8 10 12 0 200 400 600 800 10 100 1,000 10,000 60,000 0 100 200 300 400 500 600 c iss t j = =25c v ds = 520v v ds , drain-to-source voltage (v) figure 10, capacitance vs drain-to-source voltage c, capacitance (pf) v ds = 325v q g , total gate charge (nc) figure 11, gate charges vs gate-to-source voltage v gs , gate-to-source voltage (volts) i d (a) figure 13, delay times vs current t d(on) and t d(off) (ns) v sd, source-to-drain voltage (v) figure 12, source-drain diode forward voltage i dr , reverse drain current (a) i d (a) figure 14 , rise and fall times vs current t r , and t f (ns) r g , gate resistance (ohms) figure 16, switching energy vs gate resistance switching energy (uj) 0 2000 4000 6000 8000 10000 12000 0 25 50 75 100 125 150 i d (a) figure 15, switching energy vs current switching energy ( j) c oss c rss t j = +150c i d = 94a v dd = 400v r g = 4.3 t j = 125c l = 100 h t d(on) t d(off) v dd = 400v r g = 4.3 t j = 125c l = 100 h e on includes diode reverse recovery. e on e off v dd = 400v r g = 4.3 t j = 125c l = 100 h t r t f e on e off v dd = 400v i d = 94a t j = 125c l = 100 h e on includes diode reverse recovery. v ds = 130v
t-max ? (b2) package outline 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain source gate these dimensions are equal to the to-247 without the mounting hole. drain 2-plcs. dimensions in millimeters and (inches) e1 100% sn plated figure 17, turn-on switching waveforms and de nitions figure 18, turn-off switching waveforms and de nitions 10% t d(on) 10% t r 90% 5% t collector current collector voltage gate voltage t j = 125 c switching energy 5 % t t j = 125 c collector voltage collector current gate voltage 90% 90% t f t d(off) 10% switching energy 0 i c d.u.t. apt30df60 v ce figure 20, inductive switching test circuit v dd g figure 19, inductive switching test circuit 75dq60 typical performance curves apt94n65b2c3g 050-8069 rev c 2-2011
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